Summary of MAXIM INTEGRATED MAX2270X ULTRA-HIGH CMTI ISOLATED GATE DRIVERS
The MAX2270x series are single-channel isolated gate drivers designed for SiC and GaN transistors in inverters and motor control. They feature ultra-high CMTI of 300kV/μs, integrated digital galvanic isolation with 3kVRMS withstand voltage, and precise propagation delay matching (2ns at room temperature). Variants include GNDB, Miller clamp, or adjustable UVLO outputs, with Single-Ended or Differential input options to transfer signals between power domains efficiently.
Parts used in the MAX2270x Isolated Gate Drivers:
- Silicon-carbide (SiC) transistors
- Gallium-nitride (GaN) transistors
- Inverter applications
- Motor control applications
- Digital galvanic isolation process technology
Maxim MAX2270x Ultra-High CMTI Isolated Gate Drivers are single-channel isolated gate drivers with ultra-high common-mode transient immunity (CMTI) of 300kV/μs (typ). The devices are designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications. All devices have integrated digital galvanic isolation using Maxim’s proprietary process technology. The devices feature variants with output options for gate driver common pin GNDB (MAX22700), Miller clamp (MAX22701), or adjustable under-voltage-lockout UVLO (MAX22702). Also, variants are offered as Differential (D versions) or Single-Ended (E versions) inputs. These devices transfer digital signals between circuits with different power domains. All of the devices feature isolation for a withstand voltage rating of 3kVRMS for 60 seconds.

Features
- Matching propagation delay
- 20ns minimum pulse width
- 35ns propagation delay at room temperature
- 2ns part-to-part propagation delay matching at room temperature
- 5ns part-to-part propagation delay matching over -40°C to +125°C temperature range
- Robust galvanic isolation
- Withstands 3kVRMS for 60s (VISO)
- Continuously withstands 848VRMS (VIOWM)
- Withstands ±5kV surge between GNDA and VSSB with 1.2/50μs waveform
- Precision UVLO
- Options to support a broad range of applications
- 3 Output options: GNDB, Miller Clamp, or Adjustable UVLO
- 2 Input configurations: Single-Ended with Enable (E versions) or Differential (D versions)
All devices support a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The part-to-part Propagation Delay is matched within 2ns (max) at +25°C ambient temperature, and 5ns (max) over the -40°C to +125°C operating temperature range. This feature reduces the power transistor’s dead time, thus improving overall efficiency. The MAX22700 and the MAX22702 have a maximum RDSON of 1.25Ω for the low-side driver, and the MAX22701 has an RDSON of 2.5Ω for the low-side driver. All devices have a maximum RDSON of 4.5Ω for the high-side driver.
Read more: MAXIM INTEGRATED MAX2270X ULTRA-HIGH CMTI ISOLATED GATE DRIVERS
- What is the typical CMTI rating?
The devices offer an ultra-high common-mode transient immunity of 300kV/μs. - Can these drivers be used with SiC transistors?
Yes, they are specifically designed to drive silicon-carbide transistors. - How many output variants are available?
There are three output options: gate driver common pin GNDB, Miller clamp, or adjustable under-voltage-lockout UVLO. - What is the minimum pulse width supported?
All devices support a minimum pulse width of 20ns. - Does the device support differential inputs?
Yes, D versions are offered with differential input configurations. - What is the isolation withstand voltage rating?
The devices feature isolation for a withstand voltage rating of 3kVRMS for 60 seconds. - How does part-to-part propagation delay match over temperature?
Part-to-part propagation delay matches within 5ns max over the -40°C to +125°C range. - Which driver has a lower low-side RDSON?
The MAX22700 and MAX22702 have a maximum RDSON of 1.25Ω, while the MAX22701 has 2.5Ω.
