Summary of COOLSIC™ MOSFET 650 V FAMILY OFFERS BEST RELIABILITY AND PERFORMANCE TO EVEN MORE APPLICATIONS
Infineon launched CoolSiC 650 V MOSFETs (27 mΩ–107 mΩ) in TO-247 3-pin and 4-pin packages, using trench SiC technology for high reliability, low switching and conduction losses, high transconductance, 4 V threshold, and short-circuit robustness. These devices offer low temperature dependence of RDS(on), low reverse recovery charge (~80% less than best superjunction CoolMOS), and support high-frequency, high-efficiency applications such as server/telecom/industrial SMPS, solar, energy storage, UPS, motor drives, battery formation, and EV charging.
Parts used in the CoolSiC MOSFET 650 V Family:
- CoolSiC MOSFET 650 V devices (27 mΩ to 107 mΩ)
- TO-247 3-pin package
- TO-247 4-pin package
- Trench SiC semiconductor technology (device structure)
Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of applications. Amongst them are server, telecom and industrial SMPS, solar energy systems, energy storage and battery formation, UPS, motor drives as well as EV-charging.
With this launch, Infineon complements its broad silicon, silicon carbide, and gallium nitride-based power semiconductor portfolio in the 600 V / 650 V power domain,” said Steffen Metzger, Senior Director High Voltage Conversion at Infineon’s Power Management & Multimarket Division. “It underlines our unique position in the market being the only manufacturer with such a broad offering for all three power technologies. Additionally, the new CoolSiC family supports our claim to be the number 1 supplier of SiC MOSFET switches for industrial purposes.
The CoolSiC MOSFET 650 V devices are rated from 27 mΩ to 107 mΩ. They are available in classic TO-247 3-pin as well as TO-247 4-pin packages, which allows for even lower switching losses. As for all previously launched CoolSiC MOSFET products, the new family of 650 V devices are based on Infineon’s state-of-the-art trench semiconductor technology. Maximizing the strong physical characteristics of SiC, this ensures that the devices offer superior reliability, best-in-class switching and conduction losses. Additionally, they feature highest transconductance level (gain), threshold voltage (V th) of 4 V and short-circuit robustness. Thus, trench technology allows for the lowest losses in the application and highest reliability in operation – without any compromise.
650 V CoolSiC MOSFETs offer attractive benefits in comparison to other silicon and silicon carbide solutions in the market such as switching efficiency at higher frequencies and outstanding reliability. Thanks to the very low on-state resistance (R DS(on)) dependency on temperature they feature an excellent thermal behavior. The devices boast robust and stable body diodes retaining a very low level of reverse recovery charge (Q rr), roughly 80 percent less compared to the best superjunction CoolMOS™ MOSFET. The commutation-robustness helps in achieving very easily an overall system efficiency of 98 percent, e.g. through the usage of continuous conduction mode totem-pole power factor correction (PFC).
Read more: COOLSIC™ MOSFET 650 V FAMILY OFFERS BEST RELIABILITY AND PERFORMANCE TO EVEN MORE APPLICATIONS
- What voltage rating do the new CoolSiC MOSFETs have?
The new CoolSiC MOSFETs are rated at 650 V. - What on-resistance range is available for the 650 V devices?
The 650 V devices are rated from 27 mΩ to 107 mΩ. - Which package types are offered for these MOSFETs?
They are available in TO-247 3-pin and TO-247 4-pin packages. - What semiconductor technology are the new devices based on?
They are based on Infineon’s trench silicon carbide (SiC) semiconductor technology. - Do the devices offer improved switching performance?
Yes, they provide best-in-class switching and conduction losses and support higher-frequency switching. - How does RDS(on) behave with temperature for these devices?
They feature a very low dependency of RDS(on) on temperature, offering excellent thermal behavior. - How do the body diodes compare to superjunction CoolMOS devices?
The body diodes retain very low reverse recovery charge, roughly 80 percent less compared to the best superjunction CoolMOS MOSFET. - What applications are targeted by the 650 V CoolSiC MOSFET family?
Target applications include server, telecom and industrial SMPS, solar systems, energy storage and battery formation, UPS, motor drives, and EV charging. - Does the family support achieving very high system efficiency?
Yes, the commutation robustness helps to achieve overall system efficiency up to about 98 percent in applications like CCM totem-pole PFC.
