Summary of 650 V HALF-BRIDGE SOI DRIVER FAMILIES WITH INTEGRATED BOOTSTRAP DIODES OFFERS SUPERIOR ROBUSTNESS
Infineon’s new 650 V EiceDRIVER SOI half-bridge drivers (2ED218x and 2ED210x) offer high negative VS transient immunity, monolithic ultra-fast bootstrap diodes, and strong latch-up protection for MOSFET and IGBT inverters. The 2.5 A 2ED218x targets high-frequency power applications; the 0.7 A 2ED210x targets appliances and motor drives. Features include separate logic/power grounds, independent UVLOs, integrated dead-time and cross-conduction logic, −100 V negative VS immunity, 200 ns propagation delay, and support for bootstrap floating-channel operation to reduce BOM and improve robustness.
Parts used in the 650 V Half-Bridge SOI Driver Families:
- 2ED218x 2.5 A high current EiceDRIVER family
- 2ED210x 0.7 A low current EiceDRIVER family
- Integrated bootstrap diode (monolithic, ultra-fast, ~30 Ω on-resistance)
- High-side and low-side driver channels (floating channel for bootstrap operation)
- HIN and LIN logic input pins
- Separate logic ground pin
- Separate power ground pin
- Under-voltage lockout (UVLO) circuitry for both channels
- Dead-time and cross-conduction logic circuitry
Infineon Technologies AG broadens its EiceDRIVER™ portfolio with the 650 V half-bridge gate drivers based on Infineon’s unique silicon on insulator (SOI) technology. The products provide leading negative transient voltage immunity, monolithic integration of a real bootstrap diode, and superior latch-up immunity for MOSFET and IGBT based inverter applications. These unique features enable more robust and reliable designs at reduced BOM cost. The high output current family 2ED218x is tailored for high frequency applications like induction cooking, air conditioning compressors, SMPS, and UPS. The low output current family 2ED210x is targeting home appliances, power tools, motor control and drives, fans and pumps.
2ED218x is the 2.5 A high current EiceDRIVER family, while 2ED210x is the 0.7 A low current family. They include variants with shutdown functionality and separate logic and power ground. The integrated bootstrap diode offers ultra-fast reverse recovery with a typical 30 Ω on-resistance. A negative VS immunity of -100 V with repetitive 300 ns wide pulses provides superior robustness and reliable operation. Additionally, integrated dead-time with cross-conduction logic and independent under-voltage lockout (UVLO) for high and low side voltage supplies support safe operation. The propagation delay of the gate driver family amounts to 200 ns.
Features
- Operating voltages (VS node) up to +650V
- Negative VS transient immunity of 100V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- High and low voltage pins separated for maximum creepage and clearance
- Separate logic and power ground
- Floating channel designed for bootstrap operation
- Maximum supply voltage of 25V
- Independent under voltage lockout (UVLO) for both channels
- 200ns propagation delay
- HIN, LIN input logic
- Logic Operational up to –11V on VS Pin
- Negative Voltage Tolerance On Inputs of –5V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Read more: 650 V HALF-BRIDGE SOI DRIVER FAMILIES WITH INTEGRATED BOOTSTRAP DIODES OFFERS SUPERIOR ROBUSTNESS
- What are the two product families and their output currents?
The two families are 2ED218x (2.5 A high current) and 2ED210x (0.7 A low current). - What negative VS transient immunity do these drivers provide?
They provide negative VS transient immunity of 100 V with repetitive 300 ns pulses. - Do these drivers include a bootstrap diode?
Yes, they include a monolithic integrated ultra-fast bootstrap diode with about 30 Ω on-resistance. - Are logic and power grounds separated?
Yes, the devices provide separate logic and power ground pins. - Do the drivers support independent under-voltage lockout?
Yes, they have independent UVLO for both high and low side supplies. - What propagation delay is specified for the family?
The propagation delay is 200 ns. - Can the floating channel drive N-channel MOSFETs and IGBTs?
Yes, the floating channel is designed to drive N-channel MOSFETs, SiC MOSFETs, or IGBTs in high-side configuration using a bootstrap. - What maximum supply voltage do the drivers support?
The maximum supply voltage supported is 25 V. - What input voltage tolerance do the logic inputs have?
Logic operation is supported up to −11 V on the VS pin and inputs tolerate negative voltages down to −5 V.
