First germanium-tin semiconductor laser directly compatible with silicon chips

Swiss scientists have created the first semiconductor laser consisting solely of elements of main group IV (the carbon group) on the periodic table. Simply, this means that the new device is directly compatible with other elements in that group – such as silicon, carbon, and lead – and so can be directly incorporated in a silicon chip as it is manufactured. This presents new possibilities for transmitting data around computer chips using light, which could result in potential transfer speeds exponentially faster than possible with copper wire and using only a fraction of the energy of today’s integrated circuits.

Germanium lasers have been mooted for use in optical computer chips before, but the demonstration of a working prototype that has the potential for being embedded directly in a silicon-based integrated circuit brings this goal closer to reality.

First germanium-tin semiconductor laser directly compatible with silicon chips

Scientists in Switzerland working at Forschungszentrum Jülich’s Peter Grünberg Institute (PGI-9), and the Paul Scherrer Institute have used germanium (Ge) and tin (Sn) to produce a laser specifically for trial attachment and testing on a silicon wafer. The properties were subsequently measured at the Paul Scherrer Institute, showing that the GeSn compound was able to both generate laser light and amplify light signals, with the inclusion of tin being specifically important to the new device’s optical performance.

“… we were able to demonstrate that the germanium-tin compound can amplify optical signals, as well as generate laser light,” said Dr. Hans Sigg from the Laboratory for Micro and Nanotechnology.

“The high tin content is decisive for the optical properties. For the first time, we were able to introduce more than 10% tin into the crystal lattice without it losing its optical quality,” added PGI-9 PhD student Stephan Wirths.

Currently, semiconductor lasers used in electronic systems are made of elements from the periodic table main groups III or V, such as gallium arsenide. Because of this, lasers constructed from these materials are not directly compatible with the silicon used in other, silicon-based, semiconductors and it is difficult and time-consuming to make them adhere to such components. In addition, with different coefficients of expansion to the material on which they are attached, they also have reduced usable lifetimes.

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