Electronics News Updates

Toshiba launches 256 Gbit 48 layer 3 D NAND flash

Toshiba launches 256-Gbit 48-layer 3-D NAND flash

Ready for sampling in September, Toshiba’s 48-layer BiCS (Bit Cost Scalable) flash memory stores 256 Gbits using a 3-D vertically stacked cell structure and 3-bit-per-cell triple-level cell technology. By employing this 48-layer vertical stacking process, BiCS flash surpasses the capacity of conventional 2-D NAND flash memory, where cells are arrayed in a planar direction on

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Sol gel Capacitor Dielectric Offers Record high Energy Storage

Sol-gel Capacitor Dielectric Offers Record-high Energy Storage

Using a hybrid silica sol-gel material and self-assembled monolayers of a common fatty acid, researchers have developed a new capacitor dielectric material that provides an electrical energy storage capacity rivaling certain batteries, with both a high energy density and high power density. If the material can be scaled up from laboratory samples, devices made from

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Terahertz Optical Transistors Beat Silicon

Terahertz Optical Transistors Beat Silicon

PORTLAND, Ore.–Purdue University researchers have demonstrated a CMOS-compatible all-optical transistor capable of 4THz speeds, potentially over a 1000 times faster than silicon transistors. Nano-photonic transistors processed at low-temperatures can be fabricated atop complementary metal oxide semiconductors (CMOS) to boost switching time by ~5,000-times less than 300 femtoseconds (fs) or almost 4 terahertz (THz), according to

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