Terahertz Optical Transistors Beat Silicon

PORTLAND, Ore.--Purdue University researchers have demonstrated a CMOS-compatible all-optical transistor capable of 4THz speeds, potentially over a 1000 times faster than silicon transistors. Nano-photonic transistors processed at low-temperatures can be fabricated atop complementary metal oxide semiconductors (CMOS) to boost switching time by ~5,000-times less than 300 femtoseconds (fs) or almost 4 teraher ...

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Large area industrial crystalline silicon n-PERT solar cell with 22 percent efficiency

Nano-electronics research center imec announced today that it has improved its large area n-type PERT (passivated emitter, rear totally diffused) crystalline silicon (Si) solar cell on 6" commercially available n-type Cz-Si wafers, now reaching a top conversion efficiency of 22.02 percent (calibrated at ISE CalLab). This is the highest efficiency achieved for this type of 2-side-contacted solar cell on an i ...

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Silicon Carbide Substrate Boosts LED Luminosity

The majority of contemporary LEDs are constructed from a combination of Indium gallium nitride (InGaN) and sapphire substrate. The architecture works well and has allowed LED manufacturers to offer products exhibiting efficacies in excess of 150 lm/W. However, the architecture does have some drawbacks which have encouraged chipmakers to seek other options. One commercially successful alternative is silicon ...

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