Large area industrial crystalline silicon n-PERT solar cell with 22 percent efficiency
Compared to p-type silicon solar cells, n-type cells do not suffer from light induced degradation and feature a higher tolerance to common metal impurities. As a result, n-type silicon solar cells are considered as promising alternatives to p-type solar cells for next generation highly efficient solar cells.
Looking into increasing the conversion efficiency of its large-area n-PERT silicon cells using advanced industrial processes, imec has further improved the conversion efficiency of its n-PERT solar cell, reaching a record 22 percent, featuring an open-circuit voltage (Voc) of 684mV, a short-circuit current (Jsc) of 39.9 mA/cm2, and 80.7 percent fill factor (FF). Efficiency improvements were obtained by the introduction of a selective front surface field through laser doping, giving a boost in open circuit voltage and short circuit current.
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