Read more at: http://phys.org/news/2015-01-large-area-industrial-crystalline-silicon.html#jCp
Compared to p-type silicon solar cells, n-type cells do not suffer from light induced degradation and feature a higher tolerance to common metal impurities. As a result, n-type silicon solar cells are considered as promising alternatives to p-type solar cells for next generation highly efficient solar cells.
Looking into increasing the conversion efficiency of its large-area n-PERT silicon cells using advanced industrial processes, imec has further improved the conversion efficiency of its n-PERT solar cell, reaching a record 22 percent, featuring an open-circuit voltage (Voc) of 684mV, a short-circuit current (Jsc) of 39.9 mA/cm2, and 80.7 percent fill factor (FF). Efficiency improvements were obtained by the introduction of a selective front surface field through laser doping, giving a boost in open circuit voltage and short circuit current.
Read more at: http://phys.org/news/2015-01-large-area-industrial-crystalline-silicon.html#jCp
Read more at: http://phys.org/news/2015-01-large-area-industrial-crystalline-silicon.html#jCp
