Summary of NEXPERIA RELEASES NEW GAN FET DEVICES
Nexperia introduced 650 V GaN FETs—GAN041-650WSB (TO-247) and GAN039-650NBB (CCPAK)—using its H2 GaN HEMT technology. These cascode devices offer improved switching FOM and on-state performance, through-epi vias that shrink die size ~24%, and low RDS(on) (TO-247: max 41 mΩ, typ 35 mΩ; CCPAK: max 39 mΩ, typ 33 mΩ at 25 °C). They have high threshold and low diode forward voltage, are drive-compatible with standard Si MOSFET drivers, meet AEC-Q101, and CCPAK uses copper-clip packaging to reduce parasitics and improve thermal and electrical performance.
Parts used in the Nexperia GaN FET devices project:
- GAN041-650WSB (TO-247 package)
- GAN039-650NBB (CCPAK surface-mount package)
- High-voltage GaN HEMT H2 technology (cascode configuration)
- Through-epi vias
- Copper-clip CCPAK package technology
- Standard Si MOSFET drivers (for driving the cascode devices)
Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging.
The cascode within the devices allows for higher levels of switching FOMs and on-state performance.Features of the new GaN FET devices, per a press release, include the following:
The new GaN technology employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(on) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-247, with high threshold voltage and low diode forward voltage. The reduction will further increase, to 39 mΩ (max., 33 mΩ typ. At 25 °C) with CCPAK surface-mount versions. Because the parts are configured as cascode devices, they are also simple to drive using standard Si MOSFET drivers. Both versions meet the demands of AEC-Q101 for automotive applications.
Nexperia’s CCPAK surface-mount packaging leverages the company’s copper-clip package technology, which replaces internal bond wires. The technology allows for reduction in parasitic losses, optimizes electrical and thermal performance, and improves reliability,
Read more: NEXPERIA RELEASES NEW GAN FET DEVICES
- What new GaN FET parts did Nexperia release?
Nexperia released GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK. - What voltage rating do the new GaN FETs have?
They are 650 V GaN FET devices. - What is the RDS(on) of the TO-247 version?
The TO-247 version has RDS(on) max 41 mΩ and typ 35 mΩ at 25 °C. - What is the RDS(on) of the CCPAK version?
The CCPAK version has RDS(on) max 39 mΩ and typ 33 mΩ at 25 °C. - What packaging technology does CCPAK use to improve performance?
CCPAK uses copper-clip package technology to replace internal bond wires and reduce parasitic losses. - Do these GaN devices require special drivers?
No, as cascode devices they are simple to drive using standard Si MOSFET drivers. - What manufacturing feature reduced die size?
The new GaN technology employs through-epi vias, reducing die size by around 24%. - Are these parts suitable for automotive applications?
Yes, both versions meet AEC-Q101 requirements for automotive applications.
