Summary of Triquint launches GaN transistor with 6GHz bandwidth
The TriQuint T1G6001528-Q3 is a lead-free, RoHS-compliant 18 W GaN on SiC HEMT operating from DC to 6 GHz. Utilizing a 0.25 um process with advanced field plates, it delivers over 10 dB gain and >60% drain efficiency at 6 GHz. Designed for commercial wireless, military, and avionics applications, the device runs on a 28 V supply, handles 10:1 VSWR without damage, and features a low thermal resistance earless solder-down package to reduce system costs and simplify thermal management.
Parts used in the TriQuint T1G6001528-Q3 Project:
- TriQuint T1G6001528-Q3 discrete GaN on SiC HEMT
- 0.25 um GaN on SiC process technology
- Advanced field plate techniques
- Low-thermal resistance earless solder-down package
- 28 Vdc power supply
Description
The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides greater than 10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
This part is lead-free and RoHS compliant. Evaluation boards are available upon request.
Key Features
- Frequency: DC to 6 GHz
- Output Power (P3dB): 18 W at 6 GHz
- Linear Gain: > 10 dB at 6 GHz
- Operating Voltage: 28 V
- Low thermal resistance package
TriQuint Semiconductor has introduced a gallium nitride (GaN) packaged HEMT RF power transistor that has a bandwidth of DC to 6 GHz.
The combination of high output power, efficiency and bandwidth has commercial wireless communications designs in mind as well as traditional military and avionics.
“Nearly every application today requires RF power devices that are optimised for not just one, but all performance parameters,” said Richard Martin, TriQuint defense and aerospace transistor marketing manager.
The T1G6001528-Q3 is fabricated using TriQuint’s proven 0.25?m GaN on SiC process. It incorporates advanced field plate techniques designed to enhance RF output power and efficiency at high drain bias operating conditions.
The expectation is that fewer RF power transistors and amplifiers are required to deliver a specific power level.
“Compared to even robust technologies like GaAs, GaN provides superior wideband power, efficiency and gain. Our new packaged transistor delivers its 18W output power with extremely high-efficiency, greater than 60% at 6 GHz, while providing the high gain and ruggedness today’s applications require,” said Martin.
The T1G6001528-Q3 operates from a 28Vdc power supply, will deliver its rated output power into a 10:1 VSWR without damage, and is housed in a low-thermal resistance earless solder-down package.
Typical linear gain is 10dB and drain efficiency greater than 60% at 6 GHz, maximum VSWR of 10:1, from 28Vdc supply.
For more read: Triquint launches GaN transistor with 6GHz bandwidth
- What frequency range does the T1G6001528-Q3 operate within?
The device operates from DC to 6 GHz. - How much output power does the transistor provide at 6 GHz?
It provides an output power of 18 W at 6 GHz. - Does the T1G6001528-Q3 support high VSWR conditions?
Yes, it delivers rated output power into a 10:1 VSWR without damage. - What is the typical linear gain at 6 GHz for this device?
The typical linear gain is greater than 10 dB at 6 GHz. - Can this component be used in military and avionics applications?
Yes, the design targets commercial wireless communications as well as traditional military and avionics. - What type of packaging is used for the T1G6001528-Q3?
It is housed in a low-thermal resistance earless solder-down package. - Is the T1G6001528-Q3 compliant with environmental standards?
Yes, the part is lead-free and RoHS compliant. - What is the drain efficiency at 6 GHz?
The drain efficiency is typically greater than 60% at 6 GHz.
