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Gallium nitride electronics could drastically cut energy usage

Making the new silicon: Gallium nitride electronics could drastically cut energy usage

In 2013, the Department of Energy (DOE) dedicated approximately half of a $140 million research institute for power electronics to GaN research, citing its potential to reduce worldwide energy consumption. Now MIT spinout Cambridge Electronics Inc. (CEI) has announced a line of GaN transistors and power electronic circuits that promise to cut energy usage in […]

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P3 WIFI Mains Power Dimmer Switch with CBDBv2

P3 – WIFI Mains Power Dimmer / Switch with CBDBv2

General considerations:      There are several types of dimmers generally available. These are used for resistive, and inductive loads, such as incandescent,cold cathode and low voltage (inductive) lamp sources. Note that not all electronic transformers used for low voltage lamps are suitable for dimming by Triac or Thyristors dimmers. In case of Thyristors you need

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Inside the Intel RealSense Gesture Camera 1

Inside the Intel RealSense Gesture Camera

The Intel® RealSense™ gesture camera represents another foray by Intel into the consumer products space. The camera has been incorporated into the Lenovo ThinkPad Yoga 15.  Intel disclosed at IDF14 that the device is formed using three components: a conventional color CMOS image sensor camera, an infrared images sensor, an infrared light projector (the main focus of

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Simple circuit lets you characterize JFETs

Simple circuit lets you characterize JFETs

When working with discrete JFETs, designers may need to accommodate a large variation in device parameters for a given transistor type. A square-law equation is usually used as an approximate model for the drain-current characteristic of the JFET: ID=β(VGS−VP)2, where ID is the drain current, VGS is the gate-to-source voltage, β is the transconductance parameter,

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