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GALLIUM NITRIDE FETS FROM NEXPERIA ARE EFFICIENT AND EFFECTIVE HIGH POWER FETS

GALLIUM NITRIDE FETS FROM NEXPERIA ARE EFFICIENT AND EFFECTIVE HIGH-POWER FETS

News & Updates /

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be […]

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NEXPERIA RELEASES NEW GAN FET DEVICES1

NEXPERIA RELEASES NEW GAN FET DEVICES

News & Updates /

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. The cascode within the devices allows for higher levels of switching FOMs and on-state performance.Features of the new GaN FET devices, per a

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