Summary of GALLIUM NITRIDE FETS FROM NEXPERIA ARE EFFICIENT AND EFFECTIVE HIGH-POWER FETS
Nexperia’s normally-off GaN FETs deliver high-power, high-frequency switching for EV motor drives and 5G power supplies. With a 650 V rating, +4 V threshold, 20 V VGS range, and 800 V transient capability, they offer easy driving with standard low-cost gate drivers, inherent safety against parasitic turn-on, reduced reverse conduction losses, ultra-low Qrr for fast switching, and robust gate oxide.
Parts used in the[Nexperia GaN FETs Project]:
- Nexperia normally-off GaN FET (650 V VDS)
- Gate driver (standard, low-cost)
- High-voltage power stage components for EV motor drives
- Power supply components for 5G telecommunication networks
- Protection components for transient over voltage (up to 800 V)
- PCB and thermal management components compatible with high-frequency switching
Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
Key Features
- VDS : 650 V
- Threshold voltage: +4 V
- Transient over voltage V DS : 800 V
- VGS range: 20 V
Benefits
- Easy to drive
- Inherently safe against parasitic turn on
- Reduced losses in reverse conduction mode
- Ultra low Qrr for fast switching
- Transient over voltage capability
- Robust gate oxide
Read more: GALLIUM NITRIDE FETS FROM NEXPERIA ARE EFFICIENT AND EFFECTIVE HIGH-POWER FETS
- What is the VDS rating of Nexperia GaN FETs?
The VDS rating is 650 V. - What is the threshold voltage of these GaN FETs?
The threshold voltage is +4 V. - What transient over voltage can the GaN FETs withstand?
They can withstand transient over voltage up to 800 V. - What is the VGS range for these devices?
The VGS range is 20 V. - Can standard low-cost gate drivers be used with these GaN FETs?
Yes, their design ensures standard, low-cost gate drivers can be used. - Are these GaN FETs safe against parasitic turn on?
Yes, they are inherently safe against parasitic turn on. - Do these devices have benefits for reverse conduction?
Yes, they provide reduced losses in reverse conduction mode. - What switching advantage do these GaN FETs offer?
They have ultra low Qrr for fast switching.
