Summary of GaN: 100mm production and 75W transistor
RF Micro Devices (RFMD) introduced the RF3932, a 75W GaN unmatched power transistor operating up to 3GHz with over 65% peak efficiency. Built on 48V GaN technology, it supports wideband performance for applications like wireless infrastructure and radar. Concurrently, TriQuint secured a $17.5m Air Force contract to enhance GaN IC manufacturing yield and reduce costs on 100mm wafers at its Texas facility.
Parts used in the RF3932 Project:
- RF3932 75W GaN unmatched power transistor
- Simple matching networks external to the package
- 48V GaN technology platform
RF Micro Devices has released a 75W GaN RF unmatched power transistor, claimed to deliver superior performance against competing GaAs and Si transistors.
Dubbed RF3932, it follows the recent release of the 140W RF3934, and operates from dc to 3GHz with peak efficiency over 65%.
“It incorporates simple matching networks external to the package, providing wideband gain and power performance advantages in a single amplifier,” claimed the firm.
The device is built on North Carolina-based RFMD’s 48V GaN.
“The unique combination of features enables the development of compact and efficient high power amplifiers for a broad range of applications, including private mobile radio and 3G/4G wireless infrastructure, as well as ISM [industrial scientific and medical], military and civilian radar and CATV transmission networks,” claimed RFMD.
On the other side of the US in Oregon, TriQuint also had GaN news as it announced that it has won a $17.5m manufacturing development contract from the US Air Force Research Laboratory.
The overall goal of the contract is to increase yield, lower costs and improve time-to-market cycles for GaN integrated circuits on 100mm wafers.
Expected to conclude in 2013, TriQuint is the prime contractor and all the work is to be performed at its Richardson, Texas facility.
TriQuint began offering commercial 0.25?m GaN-on-SiC foundry services in 2008.
For more detail: GaN: 100mm production amd 75W transistor
- What is the RF3932?
It is a 75W GaN unmatched power transistor released by RF Micro Devices. - How does the RF3932 perform compared to competing transistors?
It delivers superior performance against competing GaAs and Si transistors. - What frequency range does the device operate from?
The device operates from dc to 3GHz. - What is the peak efficiency of the RF3932?
The device achieves peak efficiency over 65%. - Can the RF3932 be used in military radar applications?
Yes, it enables development of amplifiers for military and civilian radar applications. - Where is the RF3932 built?
The device is built on North Carolina-based RFMD's 48V GaN technology. - What is the goal of the TriQuint contract with the US Air Force?
The goal is to increase yield, lower costs, and improve time-to-market cycles for GaN integrated circuits. - Where will the TriQuint work be performed?
All work is to be performed at its Richardson, Texas facility.
