Summary of VISHAY INTERTECHNOLOGY 30 V MOSFET HALF-BRIDGE POWER STAGE DELIVERS 11 % HIGHER OUTPUT CURRENT IN POWERPAIR® 3X3F
Vishay introduced the SiZF300DT, a 30 V n-channel MOSFET half-bridge power stage combining a high-side TrenchFET MOSFET, low-side SkyFET MOSFET, and integrated Schottky diode in a 3.3 mm × 3.3 mm PowerPAIR package. It offers low on-resistances (Channel 1: 4.5 mΩ at 10 V; Channel 2: 1.84 mΩ at 10 V), typical gate charges of 6.9 nC and 19.4 nC, higher power density and efficiency, and is 65% smaller than comparable 6×5 mm dual devices for POL, synchronous buck, and DC/DC applications.
Parts used in the SiZF300DT Power Stage:
- High-side TrenchFET MOSFET (Channel 1)
- Low-side SkyFET MOSFET (Channel 2)
- Integrated Schottky diode
- PowerPAIR package (3.3 mm by 3.3 mm)
Vishay Intertechnology, Inc. today introduced a new 30 V n-channel MOSFET half-bridge power stage that combines a high side TrenchFET® MOSFET and low side SkyFET® MOSFET with an integrated Schottky diode in one compact PowerPAIR® 3.3 mm by 3.3 mm package.
For power conversion in computing and telecom applications, the Vishay Siliconix SiZF300DT delivers increased power density and efficiency, while reducing component counts and simplifying designs.
The two MOSFETs in the device released today are internally connected in a half-bridge configuration. The Channel 1 MOSFET provides maximum on-resistance of 4.5 mΩ at 10 V and 7.0 mΩ at 4.5 V. The Channel 2 MOSFET features on-resistance of 1.84 mΩ at 10 V and 2.57 mΩ at 4.5 V. Typical gate charge for the MOSFETs is 6.9 nC and 19.4 nC, respectively.
The SiZF300DT is 65 % smaller than dual devices in 6 mm by 5 mm packages with similar on-resistance, making it one of the most compact integrated products on the market. The device provides designers with a space-saving solution for point-of-load (POL) conversion, power supplies, and synchronous buck and DC/DC converters in graphic and accelerator cards, computers, servers, and telecom and RF networking equipment.
- What is the package size of the SiZF300DT?
The SiZF300DT uses a PowerPAIR package measuring 3.3 mm by 3.3 mm. - What voltage rating does the SiZF300DT support?
The device is rated at 30 V. - What components are integrated in the SiZF300DT?
It integrates a high-side TrenchFET MOSFET, a low-side SkyFET MOSFET, and a Schottky diode. - What are the on-resistance values for Channel 1?
Channel 1 has maximum on-resistance of 4.5 mΩ at 10 V and 7.0 mΩ at 4.5 V. - What are the on-resistance values for Channel 2?
Channel 2 has on-resistance of 1.84 mΩ at 10 V and 2.57 mΩ at 4.5 V. - What are the typical gate charges for the MOSFETs?
Typical gate charges are 6.9 nC for one MOSFET and 19.4 nC for the other. - How much smaller is the SiZF300DT compared to similar dual devices?
It is 65% smaller than similar dual devices in 6 mm by 5 mm packages. - What applications is the SiZF300DT intended for?
It is intended for point-of-load conversion, power supplies, synchronous buck and DC/DC converters in graphics and accelerator cards, computers, servers, and telecom and RF networking equipment.
