Silicon Carbide Substrate Boosts LED Luminosity

Silicon Carbide Substrate Boosts LED Luminosity

The majority of contemporary LEDs are constructed from a combination of Indium gallium nitride (InGaN) and sapphire substrate. The architecture works well and has allowed LED manufacturers to offer products exhibiting efficacies in excess of 150 lm/W. However, the architecture does have some drawbacks which have encouraged chipmakers to seek other options. One commercially successful […]

Silicon Carbide Substrate Boosts LED Luminosity Continue Reading