SiC/GaN Poised for Power

PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and SiC Devices for Power Electronics Applications report. One of the big drivers behind the shift is the electric vehicle (EV) and hybrid electric vehicle (HEV) industrie ...

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