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Samsung launches industrys first 12Gb LPDDR4 DRAM

Samsung launches industry’s first 12Gb LPDDR4 DRAM

The newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, while offering excellent energy efficiency, reliability and ease of design – all essential to developing next-generation mobile devices. “By initiating mass production of 12Gb

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Hardware Protection – OverVoltage and OverCurrent

Hardware Protection – OverVoltage and OverCurrent

Three major power supply (Figure 1) architectures are defined for any engineer: 1.Linear Regulators. 2.Pulse width modulated switching (PWM). 3.High resonant technology switching. Some important parameters can described in the followig texts: Inputs: Vin(low), Vin(high) – minimum and maximum allowed input voltages, hence input voltage range. Iin(max) – maximum average input current. Outputs: Vout(min), Vout(max)

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Placa de desenvolvimento para o ESP8266

nodeLHC – Placa de desenvolvimento para o ESP8266

Durante as oficinas semanais de IoT no LHC, vimos que algumas placas de desenvolvimento utilizando o ESP8266 estavam surgindo, como a nodeMCU e o ESP-201, porém resolvemos criar a nossa própria placa, atendendo as nossas necessidades. Surgiu então o nodeLHC! A principal razão para a criação da placa, foi que a maioria das pessoas que

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Get rid of unpleasant odors easily and effectively

Get rid of unpleasant odors easily and effectively

Modul USM-MEMS-VOC is based on the innovative and highly stable TGS 8100 MEMS semiconductor sensor TGS8100 from Figaro. In the presence of detectable gas, sensor resistance decreases depending on gas concentration in the air. New technology allows very rapid response to gas concentration change. The USM-MEMS-VOC reacts within 8 seconds.   The module evaluates ratio

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inertial module 3D accelerometer and 3D gyroscope

iNEMO inertial module: 3D accelerometer and 3D gyroscope

anufactured using specialized micromachining processes, while the IC interfaces are developed using CMOS technology that allows the design of a dedicated circuit which is trimmed to better match the characteristics of the sensing element. The LSM6DS3H has a full-scale acceleration range of ±2/±4/±8/±16 g and an angular rate range of ±125/±245/±500/±1000/±2000 dps. High robustness to

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Driving LEDs

Driving LEDs

The LEDs (Light Emitting Diode) are diodes whose basic characteristic is the ability to emit light when they are passed through a current that flows from P to N region. At each recombination between the charge carriers (electrons and holes), on PN junction region, a photo emission is generated, and the total quantity of emitted

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