Triquint launches GaN transistor with 6GHz bandwidth
Description The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides greater than 10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 um process, which features advanced field plate techniques to optimize power and efficiency at high […]
Triquint launches GaN transistor with 6GHz bandwidth Continue Reading