Infineon adds GaN (Gallium Nitride) to its power portfolio: CoolGaN™ and GaN EiceDRIVER™ ICs.
The next essential step towards an energy-efficient world lies in the use of new materials and technologies. Wide bandgap semiconductors enable greater power efficiency, smaller size, lighter weight, lower cost, or all together.
Infineon is uniquely positioned in the power semiconductor market, mastering all power technologies from silicon (Si) like CoolMOS™ SJ MOSFETs and IGBTs to wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Its CoolGaN™ devices will significantly enhance designer’s ability to deliver the compact, high performance power systems of the future.
Discover Infineon’s newly launched portfolio of CoolGaN™ switches in SMD packages. Perfectly combinable with parts of the dedicated, single-channel, functional and reinforced isolated GaN EiceDRIVER™ IC family. Enter a new era of efficiency with Infineon.
Benefits
- Perfect choice for high frequency and high power density applications
- GaN EiceDRIVER™ ICs for excellent robustness and efficiency
- High quality volume supply that enables faster time-to-market
- Reduced BOM costs and overall system cost
CoolGaN™ 600 V E-Mode HEMTs
With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance enabling rugged and reliable systems at an attractive overall system cost.
The e-mode concept is a single-chip solution and hence facilitates further integration either on the chip or package level. Infineon brought its enhancement mode concept to the maturity, required for demanding applications, delivering at the same time the highest performance among all available GaN HEMTs. GaN switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options.
Read more: INFINEON GALLIUM NITRIDE POWER DEVICES
French 
English