EL SEGUNDO, Calif. — International Rectifier, IR® (NYSE: IRF), a world leader in power management technology, today announced the introduction of the IRFH4257D FastIRFET™ dual power MOSFET housed in a high performance 4×5 PQFN power block package. The new package option expands the power block family’s capability to lower power for compact designs in 12V input DC-DC synchronous buck applications including advanced telecom and netcom equipment, servers, graphic cards, desktop, Ultrabook and notebook computers.
L' IRFH4257D features IR’s latest generation silicon and proprietary packaging technology which offers excellent thermal performance, low on-state resistance (RDS(on)) and gate charge (Qg). These features deliver superior power density and lower switching losses in a compact 4×5 power block.
For more detail: Dual MOSFET squeezes into PQFN package
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